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ZXTC2063E6 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 40V, SOT23-6, complementary medium power transistors
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ZXTC2063E6
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base
breakdown voltage
BVCBO 130(-45) 170(-80)
V IC = (-)100␮A
Collector-emitter
breakdown voltage
(base open)
BVCEO (-)40 63(-65)
V IC = (-)10mA (*) *
Emitter-base
BVEBO
(-)7
(-)8.3
breakdown voltage
V IE = (-)100␮A
Emitter-collector
BVECX
(-)6
(-)7.4
breakdown voltage
(reverse blocking)
V IE = (-)100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
(0.25V < VBC < -0.25V)
Emitter-collector
breakdown voltage
(base open)
BVECO 6(-3) 7.4(-8.7)
V IE = (-)100␮A
Collector-base cut-off ICBO
current
Emitter-base cut-off IEBO
current
<1
(-)50 nA VCB =100(-36)V
(-)20 ␮A VCB =100(-36)V, Tamb= 100°C
<1
(-)50 nA VEB = (-)5.6V
Collector-emitter
saturation voltage
VCE(sat)
50(-70) 60(-90) mV IC = (-)1A, IB = (-)100mA *
85(-195) 110(-290) mV IC = (-)1A, IB = (-)20mA *
150
220
mV IC = 2A, IB = 40mA *
(-175) (-260) mV (IC = -3A, IB = -300mA *)
135
195
mV IC = 3.5A, IB = 350mA *
Base-emitter saturation VBE(sat)
voltage
(-935)
960
(-1000)
1050
mV (IC = -3A, IB = -300mA *)
mV IC = 3.5A, IB = 350mA *
Base-emitter turn-on VBE(on)
voltage
(-855)
860
(-950)
950
mV (IC = -3A, VCE = -2V *)
mV IC = 3.5A, VCE = 2V *
Static forward current hFE
transfer ratio
( )300 ( )450 ( )900
280(200) 400(280)
IC = (-)10mA, VCE = (-)2V *
IC = (-)1A, VCE = (-)2V *
(20)
(50)
(IC = -3A, VCE = -2V *)
40
60
IC = 3.5A, VCE = 2V *
Transition frequency fT
190
(270)
MHz IC = (-)50mA, VCE = (-)10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
COBO
td
tr
ts
tf
12(17)
64(57)
108(69)
428(154)
130(60)
20(25)
pF VCB = (-)10V, f = 1MHz *
ns VCC = (-)10V. IC = (-)1A, IB1
ns = IB2= (-)10mA.
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%
( ) = PNP
Issue 1 - October 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com
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