ZXTC2062E6_08 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23-6, complementary medium power transistors

ZXTC2062E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
(base open)
Emitter-base
breakdown voltage
Emitter-collector
breakdown voltage
(base open)
Collector-base cut-off
current
Emitter-base cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Min.
Typ.
BV_CBO 100(-25) 140(-55)
Max.
Unit Conditions
V I_C = (-)100␮A
BV_CEO
(-)20 35(-45)
V _{IC = (-)10mA} ^(*)
BV_EBO
BV_ECO
(-)7
(-)8.3
5(-4) 6(-8.5)
V I_E = (-)100␮A
V I_E = (-)100␮A
I_CBO
I_EBO
<1
(-)50 nA V_CB =100(-25)V
(-)0.5 ␮A ^VCB ^{=100(-25)V, T}amb^{= 100°C}
<1
(-)50 nA V_EB = (-)5.6V
V_CE(sat)
V_BE(sat)
V_BE(on)
h_FE
f_T
C_OBO
t_d
t_r
t_s
t_f
300(300)
280(170)
(65)
140
40(-55)
60(-100)
95(-185)
(-190)
140
(-925)
940
(-835)
810
450(450)
420(300)
(100)
210
(15)
15
215
(290)
17(21)
68(56)
72(68)
361(158)
64(59)
50(-65)
75(-135)
115(-280)
(-250)
190
(-1000)
1050
(-900)
900
900(900)
25(30)
mV
mV
mV
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
ns
ns
I_C = (-)1A, I_B = (-)100mA^(*)
I_C = (-)1A, I_B = (-)20mA^(*)
I_C = (-)2A, I_B = (-)40mA^(*)
(I_C = -3.5A, I_B = -175mA)^(*)
I_C = 4A, I_B = 200mA^(*)
(I_C = -3.5A, I_B = -175mA^(*))
I_C = 4A, I_B = 200mA^(*)
(I_C = -3.5A, V_CE = -2V^(*))
I_C = 4A, V_CE = 2V^(*)
I_C = (-)10mA, V_CE = (-)2V^(*)
I_C = (-)1A, V_CE = (-)2V^(*)
(I_C = -3.5A, V_CE = -2V^(*))
I_C = 4A, V_CE = 2V^(*)
(I_C = -10A, V_CE = -2V^(*))
I_C = 15A, V_CE = 2V^(*)
I_C = (-)50mA, V_CE = (-)10V
f = 100MHz
V_CB = (-)10V, f = 1MHz^(*)
V_CC = (-)10V. I_C = (-)1A,
I_B1 = -I_B2= (-)10mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
( ) = PNP
Issue 2 - October 2008
4
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