ZXTC2061E6_08 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 12V, SOT23-6, complementary medium power transistors

ZXTC2061E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
(base open)
Emitter-base
breakdown voltage
Collector-base cut-off
current
Emitter-base cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Min.
Typ.
BV_CBO 20(-12) 40(-35)
BV_CEO
(-)12 17(-25)
Max.
Unit Conditions
V I_C = (-)10␮A
V _{IC = (-)10mA} ^(*)
BV_EBO
(-)7
(-)8.4
V I_E = (-)100␮A
I_CBO
I_EBO
<1
(-)50 nA V_CB =20(-12)V
(-)0.5 ␮A ^VCB ^{=20(-12)V, T}amb^{= 100°C}
<1
(-)50 nA V_EB = (-)5.6V
V_CE(sat)
V_BE(sat)
V_BE(on)
h_FE
f_T
C_OBO
t_d
t_r
t_s
t_f
500(500)
480(290)
(75)
260
32(-55)
50(-170)
65(-220)
(-150)
145
(-955)
920
(-830)
810
800(800)
750(450)
(100)
390
260
(310)
26(17)
71(41)
70(62)
233(179)
40(-70)
60(-265)
80(-360)
(-200)
180
(-1050)
1000
(-900)
900
1500(1500)
35(25)
mV
mV
mV
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
ns
I_C = (-)1A, I_B = (-)100mA^(*)
I_C = (-)1A, I_B = (-)10mA^(*)
I_C = (-)2A, I_B = (-)40mA^(*)
(I_C = -3.5A, I_B = -350mA)^(*)
I_C = 5A, I_B = 100mA^(*)
(I_C = -3.5A, I_B = -350mA^(*))
I_C = 5A, I_B = 100mA^(*)
(I_C = -3.5A, V_CE = -2V^(*))
I_C = 5A, V_CE = 2V^(*)
I_C = (-)10mA, V_CE = (-)2V^(*)
I_C = (-)1A, V_CE = (-)2V^(*)
(I_C = -3.5A, V_CE = -2V^(*))
I_C = 5A, V_CE = 2V^(*)
I_C = (-)50mA, V_CE = (-)10V
f = 100MHz
V_CB = (-)10V, f = 1MHz^(*)
V_CC = (-)10V. I_C = (-)1A,
I_B1 = -I_B2= (-)10mA.
72(65)
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
( ) = PNP
Issue 2 - October 2008
4
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