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| ZXTAM322 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR | |||
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ZXTAM322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
40
70
V IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
15
18
V IC=10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
7.5
8.2
V IE=100â®A
25
nA VCB=32V
25
nA VEB=6V
25
nA VCES=12V
8
14
mV IC=0.1A, IB=10mA*
70
100
mV IC=1A, IB=10mA*
165
200
mV IC=3A, IB=50mA*
240
280
mV IC=4.5A, IB=50mA*
200
mV IC=4.5A, IB=100mA*
0.94
1.0
V IC=4.5A, IB=50mA*
0.88 0.95
V IC=4.5A, VCE=2V*
200
415
300
450
200
320
150
240
80
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
80
120
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
30
40
120
160
pF VCB=10V, f=1MHz
ns VCC=10V, IC=1A
ns IB1=IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 2 - JUNE 2002
4
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