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| ZXT953K Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK | |||
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ZXT953K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
SYMBOL
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
fT
MIN.
-140
-140
-100
-7
100
100
50
15
TYP. MAX. UNIT CONDITIONS
-170
-170
-125
-8.1
Ͻ1
Ͻ1
Ͻ1
-20
-80
-140
-335
-1.01
-0.94
225
200
85
30
15
125
-20
-20
-10
-30
-100
-175
-390
-1.1
-1.05
300
V IC = -100â®A
V IC = -1â®A, RBE =Õ
1kâ
V IC = -10mA*
V IE = -100â®A
nA VCB = -100V
nA VCB = -100V, RBE = Õ
1kâ
nA VEB = -6V
mV IC = -0.1A, IB = -10mA*
mV IC = -1A, IB = -100mA*
mV IC = -2A, IB = -200mA*
mV IC = -5A, IB = -500mA*
mV IC = -5A, IB = -500mA*
mV IC = -5A, VCE = -1V*
IC = -10mA, VCE = -1V*
IC = -1A, VCE = -1V*
IC = -3A, VCE = -1V*
IC = -5A, VCE = -1V*
IC = -10A, VCE = -1V*
MHz IC = -100mA, VCE = -10V
f = 50MHz
Output capacitance
Switching times
COBO
tON
tOFF
65
pF VCB = -10V, f = 1MHz*
110
nS IC = -2A, VCC = -10V,
460
nS IB1 = IB2 = -200mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
ISSUE 1 - DECEMBER 2003
SEMICONDUCTORS
4
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