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ZXT849K Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 30V NPN LOW SATURATION TRANSISTOR IN D-PAK
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ZXT849K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
80 125
V IC=100␮A
80 125
V IC=1␮A, RBE=Յ1k⍀
30
40
V IC=10mA*
7
8
V IE=100␮A
20 nA VCB=70V
20 nA VCB=70V, RBE=Յ1k⍀
10 nA VEB=6V
27
40 mV IC=0.5A, IB=20mA*
55
80 mV IC=1A, IB=20mA*
115 180 mV IC=2A, IB=20mA*
230 280 mV IC=7A, IB=350mA*
1.04 1.15 mV IC=7A, IB=350mA*
0.93 1.1 mV IC=7A, VCE=1V*
100 190
IC=10mA, VCE=1V*
100 200 300
IC=1A, VCE=1V*
100 165
IC=7A, VCE=1V*
40
90
IC=20A, VCE=2V*
100
MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
75
pF VCB=10V, f=1MHz*
45
nS IC=1A, VCC=10V,
630
nS IB1=IB2=100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.
ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
4
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