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| ZXT790AK Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK | |||
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ZXT790AK
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
VBE(SAT)
VBE(ON)
hFE
Transition Frequency
Output Capacitance
Switching Times
fT
COBO
tON
tOFF
-50 -70
-40 -60
V IC = -100â®A
V IC = -10mA (1)
-5 -8.3
V IE = -100â®A
<1
-20 nA VCB = -30V
<1
-20 nA VCB = -30V
<1
-20 nA VEB = -4V
-110 -170 mV IC = -0.5A, IB = -5mA (1)
-220 -350 mV IC = -1A, IB = -10mA (1)
-260 -450 mV IC = -2A, IB = -50mA (1)
-250 -450 mV IC = -3A, IB = -300mA (1)
-1.05 -1.15 V IC = -3A, IB = -300mA (1)
-0.9 -1.0
V IC = -3A, VCE = -2V (1)
300 450 800
IC = -10mA, VCE = -2V (1)
250 390
IC = -500mA, VCE = -2V(1)
200 350
IC = -1A, VCE = -2V (1)
150 280
IC = -2A, VCE = -2V (1)
80 170
IC = -3A, VCE = -2V (1)
100
MHz IC = -50mA, VCE = -5V
f = 50MHz
24
pF VCB = -10V, f = 1MHz (1)
35
ns IC = -500mA, VCC = -10V,
600
ns IB1 = IB2 = -50mA
NOTES
(1) Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2003
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