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| ZXT690BK Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK | |||
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ZXT690BK
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
VBE(SAT)
VBE(ON)
hFE
Transition Frequency
Output Capacitance
Switching Times
fT
COBO
tON
tOFF
60 145
45
65
V IC = 100â®A
V IC = 10mA (1)
5
8.2
V IE = 100â®A
<1
20 nA VCB = 35V
<1
20 nA VCB = 35V
<1
20 nA VEB = 4V
50
85
mV IC = 0.1A, IB = 0.5mA (1)
240 360 mV IC = 1A, IB = 5mA (1)
210 320 mV IC = 2A, IB = 40mA (1)
230 350 mV IC = 3A, IB = 150mA
1.0
1.2
mV IC = 3A, IB = 150mA (1)
0.9
1.1
mV IC = 3A, VCE = 2V (1)
500
IC = 100mA, VCE = 2V (1)
400
IC = 1A, VCE = 2V (1)
150
IC = 2A, VCE = 2V (1)
60
IC = 3A, VCE = 2V (1)
150
MHz IC = 50mA, VCE = 5V
f = 50MHz
16
pF VCB = 10V, f = 1MHz (1)
33
ns IC = 500mA, VCC = 10V,
1300
ns IB1 = IB2 = 50mA
NOTES
(1) Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2003
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