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| ZXT1M322 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V PNP LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT1M322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-20
-35
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-12
-25
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-7.5 -8.5
V
IE=-100â®A
-25 nA
VCB=-16V
-25 nA
VEB=-6V
-25 nA
VCES=-10V
-10
-100
-100
-195
-240
-17 mV
-140 mV
-150 mV
-300 mV
-300 mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1.5A, IB=-50mA*
IC=-3A, IB=-50mA*
IC=-4A, IB=-150mA*
-0.97 -1.05 V
IC=-4A, IB=-150mA*
-0.87 -0.95 V
IC=-4A, VCE=-2V*
300
475
300
450
180
275
60
100
45
70
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-8A, VCE=-2V*
IC=-10A, VCE=-2V*
100
110
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
21
30 pF
70
ns
130
ns
VCB=-10V, f=1MHz
VCC=-6V, IC=-2A
IB1=IB2=-50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 2 - JUNE 2002
4
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