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| ZXT14P40DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – SuperSOT4™ 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT14P40DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-50 -110
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-40 -90
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-7.5 -8.5
V
IE=-100â®A
-100 nA
VCB=-40V
-100 nA
VEB=-6V
-100 nA
VCES=-40V
-10
-15 mV
-100 -125 mV
-45 -55 mV
-105 -130 mV
-130 -160 mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-4A, IB=-400mA*
IC=-4A, IB=-200mA*
-1.0 V
IC=-4A, IB=-200mA*
-0.85 V
IC=-4A, VCE=-2V*
300 500
300 450 900
200 380
50 100
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-4A, VCE=-2V*
IC=-8A, VCE=-2V*
185
MHz IC=-300mA, VCE=-10V
f=-30MHz
Output Capacitance
Cobo
95
Turn-On Time
t(on)
130
Turn-Off Time
t(off)
435
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=-10V, f=1MHz
ns
VCC=-10V, IC=-4A
IB1=IB2=-100mA
ns
ISSUE 1 - MARCH 2000
4
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