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| ZXT14P20DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT14P20DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-25 -75
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-20 -60
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-7.5 -8.5
V
IE=-100â®A
-100 nA
VCB=-20V
-100 nA
VEB=-6V
-100 nA
VCES=-20V
-6
-8 mV
-60 -80 mV
-100 -125 mV
-135 -200 mV
-100 -125 mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-3A, IB=-50mA*
IC=-5A, IB=-100mA*
IC=-5A, IB=-500mA*
-1.0 V
IC=-5A, IB=-100mA*
-0.85 V
IC=-5A, VCE=-2V*
300 500
300 450 900
200 300
60 100
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-15A, VCE=-2V*
170
MHz IC=-300mA, VCE=-10V
f=-30MHz
Output Capacitance
Cobo
130
Turn-On Time
t(on)
120
Turn-Off Time
t(off)
330
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=-10V, f=1MHz
ns
VCC=-10V, IC=-5A
IB1=IB2=-125mA
ns
ISSUE 1 - MARCH 2000
4
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