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| ZXT14P12DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT14P12DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-20 -36
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-12 -25
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-7.5 -8.5
V
IE=-100â®A
-100 nA
VCB=-16V
-100 nA
VEB=-6V
-100 nA
VCES=-16V
-3
-5 mV
-40 -50 mV
-20 -30 mV
-125 -165 mV
-95 -115 mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1A, IB=-50mA*
IC=-6A, IB=-60mA*
IC=-6A, IB=-300mA*
-0.9 V
IC=-6A, IB=-60mA*
-0.85 V
IC=-6A, VCE=-2V*
300 500
300 450 900
250 400
75 150
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-20A, VCE=-2V*
110
MHz IC=-300mA, VCE=-10V
f=30MHz
Output Capacitance
Cobo
205
Turn-On Time
t(on)
158
Turn-Off Time
t(off)
190
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=-10V, f=1MHz
ns
VCC=-6V, IC=-6A
IB1=IB2=-150mA
ns
ISSUE 1 - MARCH 2000
4
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