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| ZXT14N50DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT14N50DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
100 190
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
50
70
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
7.5
8.5
V
IE=100â®A
100 nA
VCB=80V
100 nA
VEB=6V
100 nA
VCES=80V
6
9 mV IC=0.1A, IB=10mA*
50
70 mV IC=1A, IB=10mA*
90 120 mV IC=3A, IB=40mA*
120 155 mV IC=6A, IB=120mA*
100 130 mV IC=6A, IB=300mA*
0.95 V
IC=6A, IB=120mA*
0.90 V
IC=6A, VCE=2V*
250 400
300 450 900
200 350
75 150
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=6A, VCE=2V*
IC=12A, VCE=2V*
185
MHz IC=300mA, VCE=10V
f=30MHz
Output Capacitance
Cobo
65
Turn-On Time
t(on)
210
Turn-Off Time
t(off)
740
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=5A
IB1=IB2=125mA
ns
ISSUE 1 - MARCH 2000
4
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