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| ZXT13P12DE6 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT13P12DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -20
-33
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -12
-25
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
300
Ratio
300
200
20
Transition Frequency
fT
-8.5
-100
-100
-100
-7.5
-68
-135
-200
-150
-10
-90
-175
-250
-175
-1.0
-0.9
500
450
900
300
30
55
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
IE=-100â®A
VCB=-16V
VEB=-6V
VCES=-16V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-3A, IB=-50mA*
IC=-4A, IB=-50mA*
IC=-4A, IB=-400mA*
IC=-4A, IB=-50mA*
IC=-4A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-4A, VCE=-2V*
IC=-15A, VCE=-2V*
IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
115
Turn-On Time
t(on)
70
Turn-Off Time
t(off)
265
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle  2%
pF
VCB=-10V, f=1MHz
ns
VCC=-10V, IC=-3A
IB1=IB2=-60mA
ns
ISSUE 1 - DECEMBER 1999
4
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