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| ZXT13N50DE6 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT13N50DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 100
190
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 50
70
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
250
Ratio
300
100
10
Transition Frequency
fT
8.5
100
100
100
8.0 12
75
100
150
200
175
230
145
180
1.0
0.9
400
450
900
220
30
115
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=80V
VEB=6V
VCES=80V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=4A, IB=100mA*
IC=4A, IB=400mA*
IC=4A, IB=100mA*
IC=4A, VCE=2V*
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE=2V*
IC=50mA, VCE10V
f=50MHz
Output Capacitance
Cobo
31
Turn-On Time
t(on)
220
Turn-Off Time
t(off)
830
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=1A
IB1=IB2=20mA
ns
ISSUE 1 - NOVEMBER 1999
4
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