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| ZXT12P20DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT12P20DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -25
-65
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -20
-55
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
300
Ratio
300
200
50
Transition Frequency
fT
-8.5
-100
-100
-100
-12
-95
-160
-16
-125
-200
-0.95 -1.0
-0.8 -0.85
450
450
900
350
80
110
V
nA
nA
nA
mV
mV
mV
V
V
MHz
IE=-100â®A
VCB=-20V
VEB=-6V
VCES=-20V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=20mA*
IC=-2.5A, IB=-125mA*
IC=-2.5A, IB=-125mA*
IC=-2.5A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-50mA, VCE=-10V
f=-50MHz
Output Capacitance
Cobo
45
Turn-On Time
t(on)
90
Turn-Off Time
t(off)
325
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=-10V, f=1MHz
ns
VCC=-10V, IC=-2A
IB1=IB2=-40mA
ns
ISSUE 1 - MARCH 2000
4
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