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| ZXT12P12DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT12P12DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -20
-35
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -12
-28
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
300
Ratio
300
200
20
Transition Frequency
fT
-8.5
-100
-100
-100
-8
-65
-195
-140
-11
-85
-270
-190
-0.88 -0.95
-0.84 -0.90
450
450
900
300
40
85
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=-100â®A
VCB=-16V
VEB=-6V
VCES=-16V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=20mA*
IC=-3A, IB=-30mA*
IC=-3A, IB=-150mA*
IC=-3A, IB=-30mA*
IC=-3A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-12A, VCE=-2V*
IC=-50mA, VCE=-10V
f=-50MHz
Output Capacitance
Cobo
75
Turn-On Time
t(on)
100
Turn-Off Time
t(off)
1710
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=-10V, f=1MHz
ns
VCC=-10V, IC=-3A
IB1=IB2=-60mA
ns
ISSUE 1 - MARCH 2000
4
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