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| ZXT12N20DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT12N20DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 50
100
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 20
30
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
250
Ratio
300
200
40
Transition Frequency
fT
8.5
100
100
100
7.0 10
65
100
120
160
160
200
0.9 1.0
0.85 0.9
400
450
900
320
70
112
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=40V
VEB=6V
VCES=40V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=150mA*
IC=3.5A, IB=50mA*
IC=3.5A, IB=50mA*
IC=3.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=3.5A, VCE=2V*
IC=10A, VCE=2V*
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
43
Turn-On Time
t(on)
65
Turn-Off Time
t(off)
400
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=2A
IB1=IB2=40mA
ns
ISSUE 1 - MARCH 2000
4
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