ZXMP7A17K Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 70V P-channel enhancement mode MOSFET

ZXMP7A17K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-source breakdown
voltage
V_(BR)DSS
Zero gate voltage drain
I_DSS
current
Gate-body leakage
I_GSS
Gate-source threshold voltage V_GS(th)
Static drain-source on-state
resistance ^(*)
R_DS(on)
Min.
-70
-1.0
Forward transconductance^{(*)(‡) g}fs
Dynamic^(‡)
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Switching ^{(†) (‡)}
Turn-on-delay time
t_d(on)
Rise time
t_r
Turn-off delay time
t_d(off)
Fall time
t_f
Total gate charge
Q_g
Total gate charge
Q_g
Gate-source charge
Q_gs
Gate drain charge
Q_gd
Source-drain diode
Diode forward voltage^(*)
V_SD
Reverse recovery time^(‡)
t_rr
Reverse recovery charge^(‡)
Q_rr
Typ.
4.4
635
52
42.5
2.5
3.4
27.9
8
9.6
18
1.77
3.66
-0.85
29.8
38.5
Max.
-1
100
0.16
0.25
-0.95
Unit Conditions
V I_D= -250␮A, V_GS=0V
␮A V_DS= -70V, V_GS=0V
nA V_GS=±20V, V_DS=0V
V I_D= -250␮A, V_DS=V_GS
⍀ V_GS= -10V, I_D= -2.1A
⍀ V_GS= -4.5V, I_D = -1.7A
S V_DS= -15V, I_D= -2.1A
pF
pF ^{VDS= -40V, VGS=0V}
f=1MHz
pF
ns
ns _{VDD= -35V, ID= -1A}
ns ^RG^{≅6.0⍀, V}GS^{= -10V}
ns
nC V_DS= -35V, V_GS= -5V
I_D= -2.1A
nC
nC ^{VDS= -35V, VGS= -10V}
I_D= -2.1A
nC
V T_j=25°C, I_S= -2.0A,
V_GS=0V
ns T_j=25°C, I_S= -2.1A,
nC ^{di/dt=100A/␮s}
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
4
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