ZXMP6A18DN8 Datasheet, PDF (4/7 Pages) Zetex Semiconductors – DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

ZXMP6A18DN8
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V_(BR)DSS
-60
V I_D=-250µA, V_GS=0V
Zero Gate Voltage Drain Current
I_DSS
-1.0 ␮A V_DS=-60V, V_GS=0V
Gate-Body Leakage
I_GSS
100 nA V_GS=Ϯ20V, V_DS=0V
Gate-Source Threshold Voltage
V_GS(th)
Static Drain-Source On-State Resistance ⁽¹⁾ R_DS(on)
Forward Transconductance ⁽¹⁾⁽³⁾
g_fs
DYNAMIC ⁽³⁾
-1.0
V
VI^DD=_S^-=25V0_G^␮_S^A,
0.055
0.080
⍀ V_GS=-10V, I_D=-3.5A
⍀ V_GS=-4.5V, I_D=-2.9A
8.7
S V_DS=-15V,I_D=-3.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING^{(2) (3)}
C_iss
C_oss
C_rss
1580
160
140
pF
pF
V_DS=-30 V, V_GS=0V,
f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage ⁽¹⁾
Reverse Recovery Time ⁽³⁾
Reverse Recovery Charge ⁽³⁾
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
V_SD
t_rr
Q_rr
4.6
ns
5.8
ns _{VDD =-30V, ID=-1A}
55
ns ^{RG≅6.0⍀, VGS=-10V}
23
ns
23
nC V_DS=-30V,V_GS=-5V,
I_D=-3.5A
44
nC
3.9
nC
V_DS=-30V,V_GS=-10V,
I_D=-3.5A
9.8
nC
-0.85 -0.95
37
56
V T_J=25°C, I_S=-4.2A,
V_GS=0V
ns T_J=25°C, I_F=-2.1A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2005
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