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| ZXMP2120FF Datasheet, PDF (4/10 Pages) Zetex Semiconductors – 200V SOT23F P-channel enhancement mode MOSFET | |||
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ZXMP2120FF
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-source breakdown
voltage
V(BR)DSS
Zero gate voltage drain current IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage VGS(th)
Static drain-source on-state
resistance (*)
RDS(on)
On-state drain current(*)
ID(on)
Forward transconductance(*) (â¡) gfs
Dynamic(â¡)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Switching (â ) (â¡)
Turn-on-delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-200
-1.5
-300
50
Max.
-10
-100
20
-3.5
28
100
25
7
7
15
12
15
Unit Conditions
V ID= 1mA, VGS=0V
â®A VDS= -200V, VGS=0V
â®A VDS= -160V, VGS=0V, T=125C(â¡)
nA VGS=±20V, VDS=0V
V ID= 250â®A, VDS=VGS
â VGS= -10V, ID= -150mA
mA VDS= -25V, VGS=-10V
mS VDS= -25V, ID= -150mA
pF VDS= -25V, VGS=0V
pF f=1MHz
pF
ns VDD= -25V, VGS= -10V
ns ID= -150mA
ns RSOURCE â 50â
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
(â ) Switching characteristics are independent of operating junction temperature.
(â¡) For design aid only, not subject to production testing.
Issue 1 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com
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