ZXMP10A17E6 Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 100V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP10A17E6
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
DYNAMIC (3)
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
g_fs
-100
-2.0
V I_D= -250µA, V_GS=0V
-1.0 ␮A V_DS= -100V, V_GS=0V
100 nA V_GS=±20V, V_DS=0V
-4.0
V I_D= -250µA, V_DS=V_GS
0.350
0.450
⍀ V_GS= -10V, I_D= -1.4A
⍀ V_GS= -6V, I_D= -1.2A
2.8
S V_DS= -15V, I_D= -1.4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
C_iss
C_oss
C_rss
424
pF
36.6
pF
V_DS= -50V, V_GS=0V
f=1MHz
29.8
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
3.0
3.5
13.4
7.2
6.1
10.7
1.7
3.8
ns
ns _{VDD= -50V, ID= -1A}
ns R_G ≅ 6.0Ω, V_GS= -10V
ns
nC V_DS= -50V, V_GS= -5V
I_D= -1.4A
nC
nC
V_DS= -50V, V_GS= -10V
I_D= -1.4A
nC
Diode Forward Voltage (1)
V_SD
Reverse Recovery Time (3)
t_rr
Reverse Recovery Charge (3)
Q_rr
-0.85 -0.95
33
48
V T_j=25°C, I_S= -1.7A,
V_GS=0V
ns T_j=25°C, I_S= -1.5A,
nC ^{di/dt=100A/µs}
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SEMICONDUCTORS
ISSUE 2 - SEPTEMBER 2005
4