ZXMN7A11K Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 70V N-channel enhancement mode MOSFET

ZXMN7A11K
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-source breakdown
voltage
V_(BR)DSS
Zero gate voltage drain current I_DSS
Gate-body leakage
I_GSS
Gate-source threshold voltage V_GS(th)
Static drain-source on-state
resistance ^(*)
R_DS(on)
Min.
70
1.0
Forward transconductance^{(*)(‡) g}fs
Dynamic^(‡)
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Switching ^{(†) (‡)}
Turn-on-delay time
t_d(on)
Rise time
t_r
Turn-off delay time
t_d(off)
Fall time
t_f
Total gate charge
Q_g
Total gate charge
Q_g
Gate-source charge
Q_gs
Gate drain charge
Q_gd
Source-drain diode
Diode forward voltage^(*)
V_SD
Reverse recovery time ^(‡)
t_rr
Reverse recovery charge^(‡)
Q_rr
Typ.
4.66
298
35
21
1.9
2
11.5
5.8
4.35
7.4
1.06
1.8
0.85
19.8
14
Max.
1
100
0.13
0.19
0.95
Unit Conditions
V I_D= 250␮A, V_GS=0V
␮A V_DS= 70V, V_GS=0V
nA V_GS=±20V, V_DS=0V
V I_D= 250␮A, V_DS=V_GS
⍀ V_GS= 10V, I_D= 4.4A
⍀ ^{VGS= 4.5V, ID = 3.8A}
S ^{VDS= 15V, ID= 4.4A}
pF
pF ^{VDS= 40V, VGS=0V}
f=1MHz
pF
ns
ns _{VDD= 35V, ID= 1A}
ns ^RG^{≅6.0⍀, V}GS^{= 10V}
ns
nC V_DS= 35V, V_GS= 5V
I_D= 4.4A
nC
nC ^{VDS=35V, VGS= 10V}
I_D= 4.4A
nC
V T_j=25°C, I_S= 2.5A,
V_GS=0V
ns _{Tj=25°C, IS= 2.5A,}
nC di/dt=100A/␮s
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - August 2006
4
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