ZXM62P03G Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXM62P03G
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V_(BR)DSS
-30
Zero Gate Voltage Drain Current
I_DSS
Gate-Body Leakage
I_GSS
Gate-Source Threshold Voltage
V_GS(th)
-1.0
Static Drain-Source On-State Resistance R_DS(on)
(1)
Forward Transconductance (1)(3)
g_fs
1.1
DYNAMIC (3)
V
-1
␮A
100 nA
V
0.15 ⍀
0.23 ⍀
S
I_D=-250µA, V_GS=0V
V_DS=-30V, V_GS=0V
V_GS=Ϯ20V, V_DS=0V
I =-250␮A,
D
V_DS=
V_GS
V_GS=-10V, I_D=-1.6A
V_GS=-4.5V, I_D=-0.8A
V_DS=-10V,I_D=-0.8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
C_iss
C_oss
C_rss
330
pF
V_DS=-25V, V_GS=0V,
120
pF f=1MHz
45
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
2.8
ns
6.4
ns
13.9
ns
10.3
ns
10.2 nC
1.5 nC
3
nC
V_DD =-15V, I_D=-1.6A
R_G=6.2⍀, V_GS=-10V
V_DS=-24V,V_GS=-10V,
I_D=-1.6A
Diode Forward Voltage (1)
V_SD
-0.95 V
Reverse Recovery Time (3)
t_rr
19.9
ns
Reverse Recovery Charge (3)
Q_rr
13
nC
NOTES
(1) Measured under pulsed conditions. Width Յ300µ s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
T_J=25ЊC, I_S=-1.6A,
V_GS=0V
T_J=25ЊC, I_F=-1.6A,
di/dt= 100A/␮s
ISSUE 2 - DECEMBER 2002
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