ZX5T869Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZX5T869Z
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
RՅ1k⍀
I_EBO
V_CE(SAT)
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
V_BE(SAT)
V_BE(ON)
h_FE
Transition frequency
f_T
60 120
V I_C = 100␮A
60 120
V I_C = 1␮A, RB Յ 1k⍀
25
35
V I_C = 10mA*
7.0 8.1
V I_E = 100␮A
20
nA V_CB = 50V
0.5 ␮A V_CB = 50V, T_amb=100ЊC
20
nA V_CB = 50V
0.5 ␮A V_CB = 50V, T_amb=100ЊC
10
nA V_EB = 6V
25
35 mV I_C = 500mA, I_B = 10mA*
30
45 mV I_C = 1A, I_B = 100mA*
45
70 mV I_C = 1A, I_B = 10mA*
105 130 mV I_C = 2A, I_B = 10mA*
160 200 mV I_C = 6.5A, I_B = 150mA*
950 1050 mV I_C = 6.5A, I_B = 150mA*
860 960 mV I_C = 6.5A, V_CE = 1V*
300 400
I_C = 10mA, V_CE = 1V*
300 450
I_C = 1A, V_CE = 1V*
200 275
I_C = 7A, V_CE = 1V*
40
55
I_C = 20A, V_CE = 1V*
150
I_C = 100mA, V_CE = 10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
48
pF V_CB = 10V, f= 1MHz*
33
ns I_C = 1A, V_CC = 10V,
464
I_B1 = -I_B2 = 100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
SEMICONDUCTORS
4
ISSUE 2 - JUNE 2005