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| FMMT620 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR | |||
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FMMT620
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 100
180
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 80
110
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
200
Ratio
300
110
60
20
Transition Frequency
fT
100
8
100
100
100
15
20
45
60
145
185
160
200
0.86 1.0
0.82 0.95
450
450
900
170
90
30
10
160
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=80V
VEB=5.5V
VCES=80V
IC=0.1A, IB=10mA*
IC=0.5A, IB=50mA*
IC=1A, IB=20mA*
IC=1.5A, IB=50mA*
IC=1.5A, IB=50mA*
IC=1.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=1.5A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
11.5 18
pF
VCB=10V, f=1MHz
Turn-On Time
Turn-Off Time
t(on)
t(off)
86
1128
ns
VCC=10V, IC=500mA
IB1=IB2=25mA
ns
*Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
ISSUE 1 - JANUARY 2001
4
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