BYY57 Datasheet, PDF (4/5 Pages) Zetex Semiconductors – 35A Silicon Power Rectifier Diode

BYY57 / BYY58
Parameter
BYY57-75...1200
Forward BYY58-75...1200
voltage
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...1200
Forward
voltage
(information
values)
BYY58-75...1200
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...1200
BYY58-75...1200
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...150
BYY58-75...150
Reverse
current
BYY57-200...1500
BYY58-200...1500
BYY57-75...400
BYY58-75...400
BYY57-500...1500
BYY58-500...1500
Threshold voltage (information
value)
Slope resistance (information
value)
Symbol
V_F
V_F
V_F
I_RRM
I_RRM
V_(FO)
r_F
Min.
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1.0
1.03
0.82
0.85
-
-
-
-
-
-
0.66
5.75
Max.
1.1
1.15
-
-
1.2
1.25
Unit Test contitions
I_F = 35 A,
V
measuring time
10ms (half-sine
wave)
I_F = 20 A,
V
measuring time
10ms (half-sine
wave),T_J = 150°C
V I_F = 50 A
3
1.5
mA
T_J = 150°C, at
V_RRM
0.25
0.1
mA at V_RRM
-
V T_J = 175°C
-
mΩ T_J = 175°C
Options: Electrical characteristics for parallel connecting
(at T_amb = 25°C unless otherwise stated)
Option
1
2
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYY57-300…1500 and
BYY58-300…1500)
Symbol
∆V_F
I_R
Min.
-
-
Typ.
-
-
Max.
0.05
0.01
Unit Test contitions
V I_F = 35 A, measuring
time 10ms (half-sine
wave)
mA at V_RRM
Packaging details
Issue 4 – September 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com