ZXTP5401FL Datasheet, PDF (3/8 Pages) Zetex Semiconductors – 150V, SOT23, PNP High voltage transistor

ZXTP5401FL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
BV_CEO
breakdown voltage (base
open)
Emitter-base breakdown BV_EBO
voltage
Collector cut-off current I_CBO
Collector-emitter
saturation voltage
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_(d)
t_(r)
t_(s)
t_(f)
Min.
-160
-150
-5
50
60
50
Typ.
-270
-240
-8.1
<-1
-50
-70
-700
-750
135
135
130
100
386
202
1720
275
Max.
-50
-50
-200
-500
1000
1000
240
10
Unit Conditions
V I_C = -100␮A
V _{IC = -1mA} ^(*)
V I_E = -10␮A
nA
␮A
mV
mV
mV
mV
MHz
V_CB = -120V
V_CB = -120V, T_amb= 100°C
I_C = -10mA, I_B = -1mA^(*)
I_C = -50mA, I_B = -5mA^(*)
I_C = -10mA, I_B = -1mA^(*)
I_C = -50mA, I_B = -5mA^(*)
I_C = -1mA, V_CE = -5V^(*)
I_C = -10mA, V_CE = -5V^(*)
I_C = -50mA, V_CE = -5V^(*)
I_C = -10mA, V_CE = -10V
f = 100MHz
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -50V. I_C = 100mA,
ns ^{IB1 = IB2= -10mA.}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - August 2007
3
© Zetex Semiconductors plc 2007
www.zetex.com