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| ZXTP2041F Datasheet, PDF (3/4 Pages) Zetex Semiconductors – SOT23 40 volt PNP silicon planar medium power transistor | |||
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ZXTP2041F
Electrical characteristics (@TAMB = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
Collector-emitter saturation
voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
ICBO
IEBO
hFE
VCE(sat)
Min.
-40
-40
-5
300
300
250
160
30
Max.
-100
-100
-100
800
-0.2
-0.3
-0.5
Base-emitter saturation voltage VBE(sat)
-1.1
Base-emitter turn-on voltage
VBE(on)
-1.0
Transition frequency
fT
150
Output capacitance
Cobo
10
Unit
V
Conditions
IC=-100â®A
V
IC=-10mA*
V IE=-100â®A
nA VCE=-30V
nA VCB=-30V
nA VEB=-4V
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
V
IC=-100mA, IB=-1mA*
V
IC=-500mA, IB=-20mA*
V
IC=-1A, IB=-100mA*
V
IC=-1A, IB=-50mA*
V
IC=-1A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
pF VCB=-10V, f=1MHz
NOTES:
* Measured under pulsed conditions. Pulse width=300 â®S. Duty cycle Õ
2%
Spice parameter data is available upon request for this device
Issue 3 - November 2005
3
© Zetex Semiconductors plc 2005
www.zetex.com
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