ZXTN5551Z Datasheet, PDF (3/8 Pages) Zetex Semiconductors – 160V, SOT89, NPN high voltage transistor

ZXTN5551Z
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
breakdown voltage
(base open)
BV_CEO
Emitter-base breakdown BV_EBO
voltage
Collector cut-off current I_CBO
Min.
180
160
6
Collector-emitter
saturation voltage
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Static forward current
h_FE
80
transfer ratio
80
30
Transition frequency
f_T
Typ.
270
Max.
200
7.85
<1
50
50
65
150
115 200
760 1000
840 1200
130
145 250
65
130
Output capacitance
C_OBO
6
Small signal
h_FE
50
260
Delay time
t_(d)
Rise time
t_(r)
Storage time
t_(s)
Fall time
t_(f)
95
64
1256
140
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
(†) Periodic sample test only
Unit Conditions
V I_C = 100␮A
V _{IC = 1mA} ^(*)
V I_E = 10␮A
nA
␮A
mV
mV
mV
mV
MHz
pF
ns
ns
ns
ns
V_CB = 120V
V_CB = 120V, T_amb= 100°C
I_C = 10mA, I_B = 1mA^(*)
I_C = 50mA, I_B = 5mA^(*)
I_C = 10mA, I_B = 1mA^(*)
I_C = 50mA, I_B = 5mA^(*)
I_C = 1mA, V_CE = 5V^(*)
I_C = 10mA, V_CE = 5V^(*)
I_C = 50mA, V_CE = 5V^(*)
I_C = 10mA, V_CE = 10V
f = 100MHz
V_CB = 10V, f = 1MHz^(*)
I_C = 10mA, V_CE = 10V,
f=1kHz ^(†)
V_CC = 10V. I_C = 1omA,
I_B1 = I_B2= 1mA.
Issue 1 - August 2007
3
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