ZXTN5551FL Datasheet, PDF (3/8 Pages) Zetex Semiconductors – 160V, SOT23, NPN High voltage transistor

ZXTN5551FL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage (base
open)
Emitter-base breakdown
voltage
Collector cut-off current
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
Collector-emitter saturation V_CE(sat)
voltage
Base-emitter saturation
voltage
V_BE(sat)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Small signal
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
h_FE
t_(d)
t_(r)
t_(s)
t_(f)
Min.
180
160
6
80
80
30
50
Typ. Max.
270
200
7.85
<1 50
50
65 150
115 200
760 1000
840 1200
135
145 250
65
130
6
260
95
64
1256
140
Unit Conditions
V I_C = 100␮A
V _{IC = 1mA} ^(*)
V I_E = 10␮A
nA
␮A
V
V
mV
mV
MHz
V_CB = 120V
V_CB = 120V, T_amb= 100°C
I_C = 10mA, I_B = 1mA^(*)
I_C = 50mA, I_B = 5mA^(*)
I_C = 10mA, I_B = 1mA^(*)
I_C = 50mA, I_B = 5mA^(*)
I_C = 1mA, V_CE = 5V^(*)
I_C = 10mA, V_CE = 5V^(*)
I_C = 50mA, V_CE = 5V^(*)
I_C = 10mA, V_CE = 10V,
f = 100MHz
pF _{VCB = 10V, f = 1MHz}^(*)
I_C = 10mA, V_CE = 10V,
f=1kHz ^(†)
ns V_CC = 10V, I_C = 10mA, I_B1 =
ns ^{IB2= 1mA}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
(†) Periodic sample test only
Issue 1 - August 2007
3
© Zetex Semiconductors plc 2007
www.zetex.com