ZVN2110A Datasheet, PDF (3/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN2110A
TYPICAL CHARACTERISTICS
500
400
300
VDS=25V
200
100
0
0
0.2
0.4
0.6
0.8
1.0
ID(on)- Drain Current (Amps)
Transconductance v drain current
500
400
300
VDS=25V
200
100
0
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
100
80
60
Ciss
40
20
Coss
Crss
0
10
20
30
40
50
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
16
14
ID=1A
12
10
8
6
VDS=
20V
50V
80V
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Q-Charge (nC)
Gate charge v gate-source voltage
3-366