ZTX789A Datasheet, PDF (3/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX789A
TYPICAL CHARACTERISTICS
1.8
IC/IB=100
1.6
IC/IB=40
IC/IB=10
1.4
1.2
Tamb=25°C
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
1.8
-55°C
1.6
+25°C
+100°C
+175°C
1.4
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
+100°C
+25°C
-55°C
VCE=2V
750
500
250
0.01
0.1
1
10
IC - Collector Current (Amps)
hFE v IC
-55°C
1.6
+25°C
+100°C
1.4
VCE=2V
1.2
1.0
0.8
0.6
0.4
0.2
00
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC
-55°C
1.6
+25°C
+100°C
1.4
+175°C
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=100
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
10
1
D.C.
1s
100ms
10ms
1.0ms
0.1
0.1ms
0.01
0.1
1
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-278