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| FMMT459 Datasheet, PDF (3/6 Pages) Zetex Semiconductors – 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR | |||
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FMMT459
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector Emitter
Cut-Off Current
Collector Emitter
Saturation Voltage
SYMBOL
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
VBE(sat)
VBE(on)
HFE
Transition Frequency
fT
MIN.
500
450
5
50
50
Output Capacitance
Turn-On Time
COBO
t(on)
Turn-Off Time
t(off)
TYP.
700
500
8
60
70
.76
.71
120
70
113
3450
MAX.
100
100
100
75
90
.9
.9
5
UNIT CONDITIONS
V
IC = 100µA
V
IC = 10mA*
V
IE = 100µA
nA VCB = 450V
nA VEB = 5V
nA VCE = 450V
mV IC = 20mA, IB = 2mA*
mV IC = 50mA, IB = 6mA*
V
IC = 50mA, IB = 5mA*
V
IC = 50mA, VCE = 10V*
MHz
PF
ns
ns
IC = 30mA, VCE = 10V*
IC = 50mA, VCE = 10V*
IC = 10mA, VCE = 20V
F = 20MHZ
VCB = 20V, f = 1MHZ
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
*Measured under plused conditions. Pulse width = 300µs. Dury cycle <2%
NB. For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
ISSUE 2 - DECEMBER 2001
3
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