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| FMMT413_06 Datasheet, PDF (3/6 Pages) Zetex Semiconductors – SOT23 NPN silicon planar avalanche transistor | |||
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FMMT413
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BVCBO
voltage
Collector-emitter
breakdown voltage
BVCES
Collector-emitter
breakdown voltage
BVCEO
Emitter-base breakdown
voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation VCE(sat)
voltage
Base-emitter saturation
voltage
VBE(sat)
Current in second
breakdown (pulsed)
IUSB
Static forward current
transfer ratio
Collector-emitter
inductance
Transition frequency
Output capacitance
hFE
Lce
fT
COBO
Min. Typ.
150
Max.
Unit Conditions
V
150
V IC = 100â®A
50
V IC = 10mA
6
V IE = 100â®A
100 nA VCB = 120V
100 nA VEB = 4V
150 mV IC = 10mA,
IB = 1mA
800 mV IC = 10mA,
IB = 1mA
22
A VC=110V, CCE=4.7nF (*)
25
A VC=130V, CCE=4.7nF(*)
50
IC = 10mA,
VCE = 10V
2.5
nH Standard SOT23
leads
150
MHz IC = 10mA, VCE = 5V,
f = 20MHz
2
pF VCB = 10V, IE = 0,
f = 1MHz
NOTES:
(*) Measured with a circuit possessing an approximate loop inductance of 12nH.
Issue 3 - March 2006
3
© Zetex Semiconductors plc 2006
www.zetex.com
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