BS107PT Datasheet, PDF (3/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BS107PT
TYPICAL CHARACTERISTICS
500
400
VDS=
25V
300
200
100
0
0
0.2
0.4
0.6
0.8
1.0
ID(On)-Drain Current (Amps)
Transconductance v drain current
500
400
300
VDS=
25V
200
100
0
0
2
4
6
.8
10
VGS-Gate-Source Voltage (Volts)
Transconductance v gate-source voltage
10
VDS= 50V 100V 180V
100
ID=500mA
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Q-Charge (nC)
Gate charge v gate-source voltage
2.4
2.0
1.6
1.2
Drain-Source ^{Resistance RDS(on)}
VGS=5V
ID=100mA
ID=-1mA
0.8
Gate
Threshold
VDS=VGS
Voltage _VGS(TH)
0.5 _{-50 -40 -20 0 20 40 60 80 100 120 140 150}
T-Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
50
ID=
500mA
250mA
I00mA
25mA
10
1
5
10 20
VGS-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
Power v temperature derating curve
3-26