ZXTN2010G Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2010G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current ^(a)
Peak pulse current
Power dissipation at T_A =25°C ^(a)
Linear derating factor
Power dissipation at T_A =25°C ^(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
LIMIT
150
60
7
6
20
3.0
24
1.6
12.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient ^(a)
SYMBOL
R_⍜JA
VALUE
42
UNIT
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
SEMICONDUCTORS
2
ISSUE 1 - JUNE 2005