ZXTD3M832 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR

ZXTD3M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current ^{(a) (f)}
Base Current
Power Dissipation at TA=25°C ^(a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C ^(b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C ^(c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C ^(d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C ^(d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C ^(e)(g)
Linear Derating Factor
Operating & Storage Temperature Range
Junction Temperature
THERMAL RESISTANCE
PARAMETER
Junction to Ambient ^(a)(f)
Junction to Ambient ^(b)(f)
Junction to Ambient ^(b)(f)
Junction to Ambient ^(d)(f)
Junction to Ambient ^(d)(g)
Junction to Ambient ^(e)(g)
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_D
P_D
P_D
P_D
P_D
P_D
T_j:T_stg
T_j
SYMBOL
R_⍜JA
R_⍜JA
R_⍜JA
R_⍜JA
R_⍜JA
R_⍜JA
LIMIT
-50
-40
-7.5
-4
-3
-1000
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
150
VALUE
83.3
51
125
111
73.5
41.7
UNIT
V
V
V
A
A
mA
W
mW/ЊC
W
mW/ЊC
W
mW/ЊC
W
mW/ЊC
W
mW/ЊC
W
mW/ЊC
ЊC
ЊC
UNIT
ЊC/W
ЊC/W
ЊC/W
ЊC/W
ЊC/W
ЊC/W
NOTES
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at tϽ5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,
1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW
SEMICONDUCTORS
2
ISSUE 1 - JUNE 2003