ZXTD09N50DE6 Datasheet, PDF (2/8 Pages) Zetex Semiconductors – DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXTD09N50DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_D
P_D
P_D
T_j:T_stg
LIMIT
50
50
5
2
1.0
200
0.90
7.2
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
R_θJA
R_θJA
R_θJA
139
°C/W
73
°C/W
113
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - JUNE 2001
2