ZXT11N20DF Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 20V NPN SILICON LOW SATURATION TRANSISTOR

ZXT11N20DF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_D
P_D
T_j:T_stg
LIMIT
40
20
7.5
5
2.5
500
625
5
806
6.4
-55 to +150
UNIT
V
V
V
A
A
mA
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R_θJA
R_θJA
200
°C/W
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 1 - DECEMBER 1999
2