ZXMN2F30FH Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 20V SOT23 N-channel enhancement mode MOSFET

ZXMN2F30FH
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V_GS=4.5; T_A=25°C^(b)
@ V_GS=4.5; T_A=70°C^(b)
@ V_GS=4.5; T_A=25°C^(a)
Pulsed drain current^(c)
Continuous source current (body diode)^(b)
Pulsed source current (body diode)^(c)
Power dissipation at T_A =25°C^(a)
Linear derating factor
Power dissipation at T_A =25°C^(b)
Linear derating factor
Operating and storage temperature range
Symbol
V_DSS
V_GS
I_D
I_DM
I_S
I_SM
P_D
P_D
T_j, T_stg
Limit
20
±12
4.9
4.0
4.1
22.6
1.6
22.6
0.96
7.6
1.4
11.2
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient^(a)
Junction to ambient^(b)
Junction to Lead^(d)
Symbol
R_⍜JA
R_⍜JA
R_⍜JL
Limit
131
89
68
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - January 2008
2
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