ZXM64N035G_04 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – 35V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXM64N035G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain
Current
(V_GS=10V;
(V_GS=10V;
(V_GS=10V;
TTT_AAA===272505°°°CCC)))^(((bba)))
Pulsed Drain Current ^(c)
Continuous Source Current (Body Diode) ^(b)
Pulsed Source Current (Body Diode)^(c)
Power Dissipation at T_A=25°C ^(a)
Linear Derating Factor
Power Dissipation at T_A=25°C ^(b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V_DSS
V_GS
I_D
I_DM
I_S
I_SM
P_D
P_D
T_j:T_stg
LIMIT
35
Ϯ20
6.7
5.4
4.8
30
2.4
30
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient ^(a)
Junction to Ambient ^(b)
SYMBOL
R_θJA
R_θJA
VALUE
62.5
32
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 1 - JUNE 2004
2