ZXM61P02F_04 Datasheet, PDF (2/7 Pages) Zetex Semiconductors – 20V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXM61P02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V_GS=4.5V; T_A=25°C)(b)
(V_GS=4.5V; T_A=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T_A=25°C (a)
Linear Derating Factor
Power Dissipation at T_A=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
SYMBOL
V_DSS
V_GS
I_D
I_DM
I_S
I_SM
P_D
P_D
T_j:T_stg
LIMIT
-20
± 12
-0.9
-0.7
-4.9
-0.9
-4.9
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R_θJA
R_θJA
200
°C/W
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
2