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| ZUMT718 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON POWER (SWITCHING) TRANSISTOR | |||
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ZUMT718
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
-20
Breakdown Voltage
V
IC= -100 A
Collector-Emitter
V(BR)CEO
-20
Breakdown Voltage
Emitter-Base
V(BR)EBO
-5
Breakdown Voltage
V
IC= -10mA*
V
IE= -100 A
Collector Cut-Off
ICBO
Current
-10
nA
VCB=-15V
Emitter Cut-Off
IEBO
Current
-10
nA
VEB=-4V
Collector Emitter
ICES
Cut-Off Current
-10
nA
VCES=-15V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-33.5 -45 mV
-80 -110 mV
-130 -175 mV
-180 -250 mV
-970 -1100 mV
IC= -0.1A, IB= -10mA*
IC= -0.25A, IB= -10mA*
IC= -0.5A, IB=-20 mA*
IC= -1A, IB= -100mA*
IC= -1A, IB= -100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-850 -1100 mV IC= -1A, VCE= 2V*
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
300 490
300 450
200 315
100 160
20 75
210
MHz
IC= -10mA, VCE=-2V*
IC= -0.1A, VCE= -2V*
IC= -0.5A, VCE=-2V*
IC= -1A, VCE= -2V*
IC= -1.5A, VCE= -2V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
11
pF
Turn-On Time
t(on)
60
ns
Turn-Off Time
t(off)
135
ns
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
VCB=-10V, f=1MHz
VCC= -10V, IC= -1A
IB1=IB2=-100mA
38
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