ZTX658 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ZTX658
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f_T
50
MHz I_C=20mA, V_CE=20V
f=20MHz
Collector-Base
C_obo
Breakdown Voltage
10
pF
V_CB=20V, f=1MHz
Switching times
t_on
t_off
130
ns
3300
ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
I_C=100mA, V_C=100V
I_B1=10mA, I_B2=-20mA
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient₁
Junction to Ambient₂
Junction to Case
R_th(j-amb)1
R_th(j-amb)2 †
R_th(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat ^{steemtemppeerraattuurree}
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
D=1 (D.C.)
t1 _D=t1/tP
100
tP
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-230