ZTX649 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

ZTX649
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Output Capacitance
C_obo
25
50
pF
Switching Times
t_on
55
ns
t_off
300
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
V_CB=10V f=1MHz
I_C=500mA, V_CC=10V
I_B1=I_B2=50mA
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient₁
Junction to Ambient₂
Junction to Case
R_th(j-amb)1
R_th(j-amb)2 †
R_th(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat ^{steemtemppeerraattuurree}
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
D=1 (D.C.)
t1 _D=t1/tP
100
tP
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-217