 English |
|
|
|
|
|
|
|
| ZDT619 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS | |||
| |||
| ◁ |
ZDT619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO 50
190
Breakdown Voltage
V
IC=100µA
Collector-Emitter
V(BR)CEO 50
65
Breakdown Voltage
V
IC=10mA*
Emitter-Base
V(BR)EBO 5
8.3
Breakdown Voltage
V
IE=100µA
Collector Cutoff
ICBO
Current
100 nA
VCB=40V
Emitter Cutoff Current IEBO
Collector Emitter
ICES
Cutoff Current
100 nA
100 nA
VEB=4V
VCES=40V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
12
20
mV
IC=0.1A, IB=10mA*
125 200 mV IC=1A, IB=10mA*
150 220 mV IC=2A, IB=50mA*
0.87 1.0 V
IC=2A, IB=50mA*
Base-Emitter Turn-On VBE(on)
Voltage
0.80 1.0 V
IC=2A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
200 400
300 450
200 400
100 225
40
100 165
MHz
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
12
20
pF
VCB=10V, f=1MHz
Turn-On Time
ton
170
ns
Turn-Off Time
toff
750
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
VCC=10V, IC=1A
IB1=-IB2=10mA
3 - 331
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese