ZC930_07 Datasheet, PDF (2/7 Pages) Zetex Semiconductors – SILICON 12V HYPERABRUPT VARACTOR DIODES

ZC930, ZMV930 series
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Power dissipation at T_amb = 25ЊC SOT23
Power dissipation at T_amb = 25ЊC SOD323
Junction temperature
Storage temperature range
SYMBOL
V_R
I_F
P_tot
P_tot
T_j
T_stg
MAX.
12
100
330
330
125
-55 to +150
UNIT
V
mA
mW
mW
ЊC
ЊC
TUNING CHARACTERISTICS at T_amb = 25°C
PART
Capacitance
Capacitance
V_R=1V
V_R=2.5V
930
931
932
933
933A
934
934A
MIN. pF
8.70
13.50
17.00
42.00
42.00
95.00
95.00
MIN. pF
4.30
6.50
8.50
18.00
20.25
40.00
47.25
MAX. pF
5.50
7.80
10.50
27.00
24.75
65.00
57.75
Capacitance
V_R=4V
MAX. pF
2.90
4.00
5.50
12.00
12.00
25.00
25.00
Minimum Q
V_R=4V
f=50MHz
200
300
200
150
150
80
80
ELECTRICAL CHARACTERISTICS at T_amb = 25°C
PARAMETER
CONDITIONS
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
I_R = 10uA
V_R = 8V
V_R = 3V, f = 1MHz
MIN.
12
TYP.
0.2
300
MAX.
100
400
UNIT
V
nA
ppCm/ЊC
ISSUE 10 - JUNE 2007
2