ZC930 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – SILICON 12V HYPERABRUPT VARACTOR DIODES

ZC930, ZMV930, ZV931 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance
V_R=1V
Capacitance
V_R=2.5V
930
931
932
933
933A
934
934A
MIN pF
8.70
13.50
17.00
42.00
42.00
95.00
95.00
MIN pF
4.30
6.50
8.50
18.00
20.25
40.00
47.25
MAX pF
5.50
7.80
10.50
27.00
24.75
65.00
57.75
Capacitance
V_R=4V
MAX pF
2.90
4.00
5.50
12.00
12.00
25.00
25.00
Minimum Q
V_R=4V
f=50MHz
200
300
200
150
150
80
80
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Power dissipation at T_amb = 25ЊC SOT23
Power dissipation at T_amb = 25ЊC SOD323
Power dissipation at T_amb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
V_R
I_F
P_tot
P_tot
P_tot
MAX
12
100
330
330
250
-55 to +150
UNIT
V
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
I_R = 10uA
V_R = 8V
V_R = 3V, f = 1MHz
MIN.
12
TYP.
0.2
300
MAX.
100
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2