ZC820 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES

830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
V_R=2V, f=1MHz
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
MIN.
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
Min Q
V_R=3V
f=50MHz
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
Capacitance Ratio
C₂ / C₂₀
at f=1MHz
MIN.
MAX.
4.3
5.8
4.3
5.8
4.5
6.0
4.5
6.0
4.5
6.0
4.5
6.0
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forward current
Power dissipation at T_amb = 25ЊC SOT23
Power dissipation at T_amb = 25ЊC SOD323
Power dissipation at T_amb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
I_F
P_tot
P_tot
P_tot
MAX
200
330
330
250
-55 to +150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
I_R = 10uA
V_R = 20V
V_R = 3V, f = 1MHz
MIN.
25
TYP.
0.2
300
MAX.
20
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2